| PART |
Description |
Maker |
| UPD72042 UPD72042GT |
LSI DEVICES FOR Inter Equipment BusTM (IEBusTM) PROTOCOL CONTROL
|
http://
NEC Corp.
|
| UPD72042BGT UPD72042B |
IEBus(Inter Equipment Bus) protocol control IC
LSI DEVICE FOR Inter Equipment Bus (IEBus) PROTOCOL CONTROL
|
NEC[NEC]
|
| LC89602 |
Audio Decoder LSI for Mini-Disk Playback(?ㄤ?寰??纾????????棰?????LSI)
CMOS LSI
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| MDR706F |
1.9GHz PHS Inter stage BPF
|
Electronic Theatre Controls, Inc.
etc
|
| LAN9730-ABZJ LAN9730-ABZJ-TR LAN9730I-ABZJ-TR |
High-Speed Inter-Chip (HSIC) USB 2.0
|
SMSC Corporation
|
| LC73862 LC73861 |
CMOS LSI
DTMF Receiver LSI
|
SANYO[Sanyo Semicon Device]
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| EPC1064 EPC1064V EPC1441 EPC1213 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
